气候变化领域集成服务门户(CCPortal): Ecofriendly silicon dioxide chemical vapor deposition for semiconductor devices using nitrogen monoxide gas source

CCPortal

DOI	10.1016/j.optmat.2024.114970
	Ecofriendly silicon dioxide chemical vapor deposition for semiconductor devices using nitrogen monoxide gas source
	Jeong, Yeojin; Song, Jang-Kun; Kim, Yong-Sang; Chung, Yung-Bin; Jeon, Woo-Seok; Jo, Jungyun; Kim, Youngkuk; Pham, Duy Phong; Yi, Junsin; Nguyen, Minh Phuong
发表日期	2024
ISSN	0925-3467
EISSN	1873-1252
起始页码	148
卷号	148
英文摘要	The release of carbon dioxide (CO2), chlorofluorocarbon (CH4), and nitrous oxide (N2O) emissions from the industrial manufacturing processes involved in semiconductor device fabrication exacerbates climate change and global warming. The most common example is the production of silicon dioxide (SiO2) using plasma enhanced chemical vapor deposition (PECVD) for photovoltaic and/or thin film transistor (TFT) devices utilizing conventional CO2 and/or N2O as precursor gases. In this paper, we examine a PECVD-based SiO2 production for semiconductor devices using nitrogen monoxide (NO) precursor gases. To the best of our knowledge, such SiO2 production has not before been examined. As a result, the quality of the resulting SiO2 for the devices is unknown. NO gas seems to a be non-toxic source and has been utilized commonly in medicine. It will be potential to replace CO2 and N2O in the future for the ecofriendly purpose of manufacturing semiconductor devices as well. The deposition rate of SiO2 is seen to be ten times greater when NO precursor gas is used compared to when CO2 gas is employed. It is noteworthy that an alternate transition occurs from silicon oxide nitride (SiON) to silicon oxide (SiO2), whereby an increase in the flow of NO gas results in a lower refractive index and dielectric constant. Comprehensive analyses are provided on the process of forming stoichiometric SiO2.
英文关键词	Plama-enhanced chemical vapor deposition; Silicon dioxide layer; Global warming potential; Greenhouse gas; Semiconductor devices
语种	英语
WOS研究方向	Materials Science ; Optics
WOS类目	Materials Science, Multidisciplinary ; Optics
WOS记录号	WOS:001174785000001
来源期刊	OPTICAL MATERIALS
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/296827
作者单位	Sungkyunkwan University (SKKU); Sungkyunkwan University (SKKU); Sungkyunkwan University (SKKU); Samsung; Samsung Display; Sungkyunkwan University (SKKU)
推荐引用方式 GB/T 7714	Jeong, Yeojin,Song, Jang-Kun,Kim, Yong-Sang,et al. Ecofriendly silicon dioxide chemical vapor deposition for semiconductor devices using nitrogen monoxide gas source[J],2024,148.
APA	Jeong, Yeojin.,Song, Jang-Kun.,Kim, Yong-Sang.,Chung, Yung-Bin.,Jeon, Woo-Seok.,...&Nguyen, Minh Phuong.(2024).Ecofriendly silicon dioxide chemical vapor deposition for semiconductor devices using nitrogen monoxide gas source.OPTICAL MATERIALS,148.
MLA	Jeong, Yeojin,et al."Ecofriendly silicon dioxide chemical vapor deposition for semiconductor devices using nitrogen monoxide gas source".OPTICAL MATERIALS 148(2024).