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DOI	10.7567/1347-4065/ab5599
	Radiation damage in ?-Ga2O3 induced by swift heavy ions
	Ai, Wensi; Xu, Lijun; Nan, Shuai; Zhai, Pengfei; Li, Weixing; Li, Zongzhen; Hu, Peipei; Zeng, Jian; Zhang, Shengxia; Liu, Li; Sun, Youmei; Liu, Jie
通讯作者	Zhai, PF ; Liu, J (通讯作者)
发表日期	2019
ISSN	0021-4922
EISSN	1347-4065
卷号	58 期号:12
英文摘要	The amorphous latent tracks in ?-Ga2O3 single crystal irradiated with ?5?10;MeV;u(?1) Ta-181 and Kr-86 ions were investigated by transmission electron microscopy (TEM). TEM images showed that the mean diameter of latent tracks increased from 2.2 to 8.8;nm with electronic energy loss (S-e) values increasing from 18.3 to 41.5;keV;nm(?1). Moreover, the inelastic thermal spike model was used to predict the latent track size. The calculation results agreed well with the experimental results and the predicted S-e threshold of latent track formation in ?-Ga2O3 was about 17;keV;nm(?1) for 5?10;MeV;u(?1) heavy ions.
关键词	THERMAL SPIKE MODEL TRACK FORMATION CROSS-SECTION AMORPHIZATION IRRADIATION OXIDES
语种	英语
WOS研究方向	Physics
WOS类目	Physics, Applied
WOS记录号	WOS:000499352200001
来源期刊	JAPANESE JOURNAL OF APPLIED PHYSICS
来源机构	中国科学院青藏高原研究所
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/259428
推荐引用方式 GB/T 7714	Ai, Wensi,Xu, Lijun,Nan, Shuai,et al. Radiation damage in ?-Ga2O3 induced by swift heavy ions[J]. 中国科学院青藏高原研究所,2019,58(12).
APA	Ai, Wensi.,Xu, Lijun.,Nan, Shuai.,Zhai, Pengfei.,Li, Weixing.,...&Liu, Jie.(2019).Radiation damage in ?-Ga2O3 induced by swift heavy ions.JAPANESE JOURNAL OF APPLIED PHYSICS,58(12).
MLA	Ai, Wensi,et al."Radiation damage in ?-Ga2O3 induced by swift heavy ions".JAPANESE JOURNAL OF APPLIED PHYSICS 58.12(2019).