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DOI	10.1016/j.microrel.2021.114345
	Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes
	Zhu, Min; Ren, Yuan; Zhou, Leidang; Chen, Jiaxiang; Guo, Haowen; Zhu, Liqi; Chen, Baile; Chen, Liang; Lu, Xing; Zou, Xinbo
通讯作者	Zou, XB (通讯作者)，ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China. ; Lu, X (通讯作者)，Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Peoples R China.
发表日期	2021
ISSN	0026-2714
EISSN	1872-941X
卷号	125
英文摘要	Temperature-dependent electrical characteristics were explicitly investigated for a 400-mu m diameter neutronirradiated (NI) GaN Schottky barrier diode (SBD). Based on C-V measurements, a marked decrease in electron concentration has been revealed for the NI diode compared with the pristine sample, suggesting a thermalenhanced carrier removal effect. Neutron irradiation causes noticeable Schottky barrier height inhomogeneity, which was studied by a two-barrier model. Data indicates that neutron irradiation affects a small but measurable suppression of leakage current as well as low frequency noise level. Despite a new deep-level trap was identified, the temperature-dependent electrical results specified GaN SBD's outstanding resistance to neutron irradiations and robustness in extreme operation temperatures.
关键词	DEFECTS
英文关键词	Deep level traps; GaN Schottky barrier diode; Low frequency noise; Neutron irradiation
语种	英语
WOS研究方向	Engineering ; Science & Technology - Other Topics ; Physics
WOS类目	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology ; Physics, Applied
WOS记录号	WOS:000704765600010
来源期刊	MICROELECTRONICS RELIABILITY
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/255057
作者单位	[Zhu, Min; Chen, Jiaxiang; Guo, Haowen; Zhu, Liqi; Chen, Baile; Zou, Xinbo] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China; [Ren, Yuan; Lu, Xing] Sun Yat Sen Univ, Sch Elect & Informat Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510006, Peoples R China; [Zhou, Leidang] Xi An Jiao Tong Univ, Sch Microelect, Xian 710049, Peoples R China; [Zhu, Min; Chen, Jiaxiang] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China; [Chen, Liang] Northwest Inst Nucl Technol, State Key Lab Intense Pulsed Radiat Simulat & Eff, Xian 710024, Peoples R China; [Ren, Yuan] Guangdong Acad Sci, Inst Semicond, Guangzhou 510650, Peoples R China; [Zhu, Min; Chen, Jiaxiang] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
推荐引用方式 GB/T 7714	Zhu, Min,Ren, Yuan,Zhou, Leidang,et al. Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes[J]. 中国科学院西北生态环境资源研究院,2021,125.
APA	Zhu, Min.,Ren, Yuan.,Zhou, Leidang.,Chen, Jiaxiang.,Guo, Haowen.,...&Zou, Xinbo.(2021).Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes.MICROELECTRONICS RELIABILITY,125.
MLA	Zhu, Min,et al."Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes".MICROELECTRONICS RELIABILITY 125(2021).