气候变化领域集成服务门户(CCPortal): Elemental electrical switch enabling phase segregation

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DOI	10.1126/science.abi6332
	Elemental electrical switch enabling phase segregation–free operation
	Shen J.; Jia S.; Shi N.; Ge Q.; Gotoh T.; Lv S.; Liu Q.; Dronskowski R.; Elliott S.R.; Song Z.; Zhu M.
发表日期	2021
ISSN	0036-8075
起始页码	1390
结束页码	1394
卷号	374 期号:6573
英文摘要	Nonvolatile phase-change memory has been successfully commercialized, but further density scaling below 10 nanometers requires compositionally and structurally homogeneous materials for both the memory cell and the associated vertically stacked two-terminal access switch. The selector switches are mostly amorphous-chalcogenide Ovonic threshold switches (OTSs), operating with a nonlinear current response above a threshold voltage in the amorphous state. However, they currently suffer from the chemical complexity introduced by the quaternary or even more diverse chalcogenide compositions used. We present a single-element tellurium (Te) volatile switch with a large (≥11 megaamperes per square centimeter) drive current density, ~103 ON/OFF current ratio, and faster than 20 nanosecond switching speed. The low OFF current arises from the existence of a ~0.95–electron volt Schottky barrier at the Te–electrode interface, whereas a transient, voltage pulse–induced crystal-liquid melting transition of the pure Te leads to a high ON current. Our discovery of a single-element electrical switch may help realize denser memory chips. © 2021 American Association for the Advancement of Science. All rights reserved.
语种	英语
来源期刊	Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/245451
作者单位	State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China; University of the Chinese Academy of Sciences, Beijing, 100029, China; Thermo Fisher Scientific China, Shanghai, 200050, China; Department of Physics, Graduate School of Science and Technology, Gunma University, Maebashi, 3718510, Japan; Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China; Institute of Inorganic Chemistry, RWTH Aachen University, Aachen, 52056, Germany; Trinity College, University of Cambridge, Cambridge, CB2 1TQ, United Kingdom; Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford, OX1 3QZ, United Kingdom
推荐引用方式 GB/T 7714	Shen J.,Jia S.,Shi N.,等. Elemental electrical switch enabling phase segregation–free operation[J],2021,374(6573).
APA	Shen J..,Jia S..,Shi N..,Ge Q..,Gotoh T..,...&Zhu M..(2021).Elemental electrical switch enabling phase segregation–free operation.Science,374(6573).
MLA	Shen J.,et al."Elemental electrical switch enabling phase segregation–free operation".Science 374.6573(2021).