气候变化领域集成服务门户(CCPortal): Designing artificial two-dimensional landscapes via atomic-layer substitution

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DOI	10.1073/pnas.2106124118
	Designing artificial two-dimensional landscapes via atomic-layer substitution
	Guo Y.; Lin Y.; Xie K.; Yuan B.; Zhu J.; Shen P.-C.; Lu A.-Y.; Su C.; Shi E.; Zhang K.; HuangFu C.; Xu H.; Cai Z.; Park J.-H.; Ji Q.; Wang J.; Dai X.; Tian X.; Huang S.; Dou L.; Jiao L.; Li J.; Yu Y.; Idrobo J.-C.; Cao T.; Palacios T.; Kong J.
发表日期	2021
ISSN	0027-8424
卷号	118 期号:32
英文摘要	Technology advancements in history have often been propelled by material innovations. In recent years, two-dimensional (2D) materials have attracted substantial interest as an ideal platform to construct atomic-level material architectures. In this work, we design a reaction pathway steered in a very different energy landscape, in contrast to typical thermal chemical vapor deposition method in high temperature, to enable room-temperature atomic-layer substitution (RT-ALS). First-principle calculations elucidate how the RT-ALS process is overall exothermic in energy and only has a small reaction barrier, facilitating the reaction to occur at room temperature. As a result, a variety of Janus monolayer transition metal dichalcogenides with vertical dipole could be universally realized. In particular, the RT-ALS strategy can be combined with lithography and fliptransfer to enable programmable in-plane multiheterostructures with different out-of-plane crystal symmetry and electric polarization. Various characterizations have confirmed the fidelity of the precise single atomic layer conversion. Our approach for designing an artificial 2D landscape at selective locations of a single layer of atoms can lead to unique electronic, photonic, and mechanical properties previously not found in nature. This opens a new paradigm for future material design, enabling structures and properties for unexplored territories. © 2021 National Academy of Sciences. All rights reserved.
英文关键词	2D materials; Atomic-layer substitution; Heterostructures; Janus transition-metal dichalcogenides; Room temperature
语种	英语
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/238443
作者单位	Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, United States; Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195, United States; School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China; Department of Nuclear and Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, United States; Davidson School of Chemical Engineering, Purdue University, West Lafayette, IN 47907, United States; Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China; Department of Electrical Engineering, The Pennsylvania State University, University Park, PA 16802, United States; Key Laboratory of Organic Optoelectronics and Molecular Engineering, The Ministry of Education, Department of Chemistry, Tsinghua University, Beijing, 100084, China; Beiji...
推荐引用方式 GB/T 7714	Guo Y.,Lin Y.,Xie K.,et al. Designing artificial two-dimensional landscapes via atomic-layer substitution[J],2021,118(32).
APA	Guo Y..,Lin Y..,Xie K..,Yuan B..,Zhu J..,...&Kong J..(2021).Designing artificial two-dimensional landscapes via atomic-layer substitution.Proceedings of the National Academy of Sciences of the United States of America,118(32).
MLA	Guo Y.,et al."Designing artificial two-dimensional landscapes via atomic-layer substitution".Proceedings of the National Academy of Sciences of the United States of America 118.32(2021).