气候变化领域集成服务门户(CCPortal): Multi-level phase-change memory with ultralow power consumption and resistance drift

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DOI	10.1016/j.scib.2021.07.018
	Multi-level phase-change memory with ultralow power consumption and resistance drift
	Liu B.; Li K.; Liu W.; Zhou J.; Wu L.; Song Z.; Elliott S.R.; Sun Z.
发表日期	2021
ISSN	20959273
英文摘要	By controlling the amorphous-to-crystalline relative volume, chalcogenide phase-change memory materials can provide multi-level data storage (MLS), which offers great potential for high-density storage-class memory and neuro-inspired computing. However, this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase (“drift”) in the amorphous phase, which limits the number of attainable storage levels. Here, we report a new type of MLS system in yttrium-doped antimony telluride, utilizing reversible multi-level phase transitions between three states, i.e., amorphous, metastable cubic and stable hexagonal crystalline phases, with ultralow power consumption (0.6–4.3 pJ) and ultralow resistance drift for the lower two states (power-law exponent < 0.007). The metastable cubic phase is stabilized by yttrium, while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb atoms. Finally, the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high performance. This study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations. © 2021 Science China Press
关键词	Antimony telluride Multi-level storage Phase-change memory Power consumption Resistance drift Yttrium doping
英文关键词	Antimony compounds; Crystalline materials; Crystallinity; Electric power utilization; Metastable phases; Phase change materials; Storage (materials); Yttrium; Antimony telluride; Data storage systems; Multi-level storage; Multilevels; Phase-change memory; Power; Resistance drifts; Ultra-low power consumption; Ultralow-power consumption; Yttrium doping; Phase change memory
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207484
作者单位	School of Materials Science and Engineering, Beihang University, Beijing, 100191, China; Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China; State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China; College of Science, Donghua University, Shanghai, 201620, China; Department of Chemistry, University of Cambridge, Cambridge, CB2 1EW, United Kingdom; Physical and Theoretical Chemistry Laboratory, University of Oxford, Oxford, OX1 3QZ, United Kingdom
推荐引用方式 GB/T 7714	Liu B.,Li K.,Liu W.,et al. Multi-level phase-change memory with ultralow power consumption and resistance drift[J],2021.
APA	Liu B..,Li K..,Liu W..,Zhou J..,Wu L..,...&Sun Z..(2021).Multi-level phase-change memory with ultralow power consumption and resistance drift.Science Bulletin.
MLA	Liu B.,et al."Multi-level phase-change memory with ultralow power consumption and resistance drift".Science Bulletin (2021).