气候变化领域集成服务门户(CCPortal): 2D perovskites for field-effect transistors

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DOI	10.1016/j.scib.2020.11.014
	2D perovskites for field-effect transistors
	Cai W.; Wang H.; Zang Z.; Ding L.
发表日期	2021
ISSN	20959273
起始页码	648
结束页码	650
卷号	66 期号:7
英文摘要	[无可用摘要]
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207348
作者单位	Key Laboratory of Optoelectronic Technology & Systems (MoE), Chongqing University, Chongqing, 400044, China; Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, China
推荐引用方式 GB/T 7714	Cai W.,Wang H.,Zang Z.,et al. 2D perovskites for field-effect transistors[J],2021,66(7).
APA	Cai W.,Wang H.,Zang Z.,&Ding L..(2021).2D perovskites for field-effect transistors.Science Bulletin,66(7).
MLA	Cai W.,et al."2D perovskites for field-effect transistors".Science Bulletin 66.7(2021).