气候变化领域集成服务门户(CCPortal): C-V characteristics of piezotronic metal-insulator-semiconductor transistor

CCPortal

DOI	10.1016/j.scib.2019.11.001
	C-V characteristics of piezotronic metal-insulator-semiconductor transistor
	Zheng J.; Zhou Y.; Zhang Y.; Li L.; Zhang Y.
发表日期	2020
ISSN	20959273
起始页码	161
结束页码	168
卷号	65 期号:2
英文摘要	Third generation semiconductors for piezotronics and piezo-phototronics, such as ZnO and GaN, have both piezoelectric and semiconducting properties. Piezotronic devices normally exhibit high strain sensitivity because strain-induced piezoelectric charges control or tune the carrier transport at junctions, contacts and interfaces. The distribution width of piezoelectric charges in a junction is one of important parameters. Capacitance-voltage (C-V) characteristics can be used to estimate the distribution width of strain-induced piezoelectric charges. Piezotronic metal–insulator-semiconductor (MIS) has been modelled by analytical solutions and numerical simulations in this paper, which can serve as guidance for C-V measurements and experimental designs of piezotronic devices. © 2019 Science China Press
关键词	Capacitance-voltage (C-V) characteristics Distribution width of strain-induced piezoelectric charges Metal-insulator-semiconductor Piezotronic effect
英文关键词	Capacitance; Gallium nitride; II-VI semiconductors; III-V semiconductors; Magnetic semiconductors; Metal insulator boundaries; MIS devices; MISFET devices; Piezoelectricity; Semiconducting zinc compounds; Semiconductor insulator boundaries; Semiconductor junctions; Wide band gap semiconductors; Zinc oxide; C-V characteristic; C-V measurement; Capacitance-voltage characteristics; Metal-insulator-semiconductors; Piezoelectric charge; Piezotronic effect; Semi-conducting property; Third generation; Semiconducting gallium compounds
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207328
作者单位	School of Physics, University of Electronic Science and Technology of China, Chengdu, 610054, China; Department of Computer Science, University of Rochester, Rochester, NY 14627, United States; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China; Multidisciplinary Nanotechnology Centre, College of Engineering, Swansea University, Swansea, SA1 8EN, United Kingdom; College of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
推荐引用方式 GB/T 7714	Zheng J.,Zhou Y.,Zhang Y.,et al. C-V characteristics of piezotronic metal-insulator-semiconductor transistor[J],2020,65(2).
APA	Zheng J.,Zhou Y.,Zhang Y.,Li L.,&Zhang Y..(2020).C-V characteristics of piezotronic metal-insulator-semiconductor transistor.Science Bulletin,65(2).
MLA	Zheng J.,et al."C-V characteristics of piezotronic metal-insulator-semiconductor transistor".Science Bulletin 65.2(2020).