气候变化领域集成服务门户(CCPortal): From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions

CCPortal

DOI	10.1016/j.scib.2020.03.035
	From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions
	Hu C.; Zhang D.; Yan F.; Li Y.; Lv Q.; Zhu W.; Wei Z.; Chang K.; Wang K.
发表日期	2020
ISSN	20959273
起始页码	1072
结束页码	1077
卷号	65 期号:13
英文摘要	Different than covalently bonded magnetic multilayer systems, high-quality interfaces without dangling bonds in van der Waals (vdW) junctions of two-dimensional (2D) layered magnetic materials offer opportunities to realize novel functionalities. Here, we report the fabrication of multi-state vertical spin valves without spacer layers by using vdW homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers. We demonstrate the typical behavior of two-state and three-state magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes, respectively. Distinct from traditional spin valves with sandwich structures, our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices. Our work demonstrates the possibility of extend multi-state, non-volatile spin information to 2D magnetic homo-junctions, and it emphasizes the utility of vdW interface as a fundamental building block for spintronic devices. © 2020 Science China Press
关键词	Fe3GeTe2 Multi-state Van der Waals homo-junction Vertical spin valve Without spacer layer
英文关键词	Dangling bonds; Germanium compounds; Iron compounds; Magnetic devices; Magnetic materials; Magnetic multilayers; Magnetoresistance; Tellurium compounds; Van der Waals forces; Fe3GeTe2; Homo-junctions; Multi-state; Spacer layer; Spin valve; Interface states
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207058
作者单位	State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China; Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China; Beijing Academy of Quantum Information Sciences, Beijing, 100193, China
推荐引用方式 GB/T 7714	Hu C.,Zhang D.,Yan F.,et al. From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions[J],2020,65(13).
APA	Hu C..,Zhang D..,Yan F..,Li Y..,Lv Q..,...&Wang K..(2020).From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions.Science Bulletin,65(13).
MLA	Hu C.,et al."From two- to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions".Science Bulletin 65.13(2020).