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DOI	10.1016/j.scib.2020.09.024
	Reversible magnetism transition at ferroelectric oxide heterointerface
	Chen J.; Zhang Z.; Luo L.; Lu Y.; Song C.; Cheng D.; Chen X.; Li W.; Ren Z.; Wang J.; Tian H.; Zhang Z.; Han G.
发表日期	2020
ISSN	20959273
起始页码	2094
结束页码	2099
卷号	65 期号:24
英文摘要	Oxide heterointerface is a platform to create unprecedented two-dimensional electron gas, superconductivity and ferromagnetism, arising from a polar discontinuity at the interface. In particular, the ability to tune these intriguing effects paves a way to elucidate their fundamental physics and to develop novel electronic/magnetic devices. In this work, we report for the first time that a ferroelectric polarization screening at SrTiO3/PbTiO3 interface is able to drive an electronic construction of Ti atom, giving rise to room-temperature ferromagnetism. Surprisingly, such ferromagnetism can be switched to antiferromagnetism by applying a magnetic field, which is reversible. A coupling of itinerant electrons with local moments at interfacial Ti 3d orbital was proposed to explain the magnetism. The localization of the itinerant electrons under a magnetic field is responsible for the suppression of magnetism. These findings provide new insights into interfacial magnetism and their control by magnetic field relevant interfacial electrons promising for device applications. © 2020 Science China Press
关键词	Ferroelectric polarization Interface Magnetic transition SrTiO3/PbTiO3
英文关键词	Electrons; Ferroelectricity; Magnetic fields; Phase interfaces; Strontium titanates; Titanium; Two dimensional electron gas; Device application; Ferroelectric oxides; Ferroelectric polarization; Fundamental physics; Hetero interfaces; Itinerant electrons; Local moments; Room temperature ferromagnetism; Ferromagnetism
语种	英语
来源期刊	Science Bulletin
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/207004
作者单位	State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Cyrus Tang Center for Sensor Materials and Application, Zhejiang University, Hangzhou, 310027, China; Center of Electron Microscope, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China; Department of Physics and Astronomy, Iowa State University and Ames Laboratory-USDOE, Ames, IA 50011, United States; Department of Physics, Zhejiang University, Hangzhou, 310027, China; Key Laboratory of Advanced Materials (Ministry of Education), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
推荐引用方式 GB/T 7714	Chen J.,Zhang Z.,Luo L.,et al. Reversible magnetism transition at ferroelectric oxide heterointerface[J],2020,65(24).
APA	Chen J..,Zhang Z..,Luo L..,Lu Y..,Song C..,...&Han G..(2020).Reversible magnetism transition at ferroelectric oxide heterointerface.Science Bulletin,65(24).
MLA	Chen J.,et al."Reversible magnetism transition at ferroelectric oxide heterointerface".Science Bulletin 65.24(2020).