气候变化领域集成服务门户(CCPortal): Potential-induced degradation in photovoltaic modules: A critical review

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DOI	10.1039/c6ee02271e
	Potential-induced degradation in photovoltaic modules: A critical review
	Luo W.; Khoo Y.S.; Hacke P.; Naumann V.; Lausch D.; Harvey S.P.; Singh J.P.; Chai J.; Wang Y.; Aberle A.G.; Ramakrishna S.
发表日期	2017
ISSN	17545692
起始页码	43
结束页码	68
卷号	10 期号:1
英文摘要	Potential-induced degradation (PID) has received considerable attention in recent years due to its detrimental impact on photovoltaic (PV) module performance under field conditions. Both crystalline silicon (c-Si) and thin-film PV modules are susceptible to PID. While extensive studies have already been conducted in this area, the understanding of the PID phenomena is still incomplete and it remains a major problem in the PV industry. Herein, a critical review of the available literature is given to serve as a one-stop source for understanding the current status of PID research. This paper also aims to provide an overview of future research paths to address PID-related issues. This paper consists of three parts. In the first part, the modelling of leakage current paths in the module package is discussed. The PID mechanisms in both c-Si and thin-film PV modules are also comprehensively reviewed. The second part summarizes various test methods to evaluate PV modules for PID. The last part focuses on studies related to PID in the omnipresent p-type c-Si PV modules. The dependence of temperature, humidity and voltage on the progression of PID is examined. Preventive measures against PID at the cell, module and system levels are illustrated. Moreover, PID recovery in standard p-type c-Si PV modules is also studied. Most of the findings from p-type c-Si PV modules are also applicable to other PV module technologies. © The Royal Society of Chemistry 2017.
英文关键词	Silicon; Testing; Thin films; C-Si PV modules; Critical review; Crystalline silicons; Field conditions; Induced degradation; Module packages; Photovoltaic modules; Preventive measures; Photovoltaic cells; crystallinity; current; degradation; performance assessment; photovoltaic system; silicon
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190585
作者单位	Solar Energy Research Institute of Singapore (SERIS), National University of Singapore, Singapore, 117574, Singapore; Department of Mechanical Engineering, National University of Singapore, Singapore, 11757, Singapore; National Renewable Energy Laboratory (NREL), Golden, CO 80401, United States; Fraunhofer Center for Silicon Photovoltaics CSP, Halle (Saale), 06120, Germany; Department of Electrical and Computing Engineering, National University of Singapore, Singapore, 117583, Singapore
推荐引用方式 GB/T 7714	Luo W.,Khoo Y.S.,Hacke P.,et al. Potential-induced degradation in photovoltaic modules: A critical review[J],2017,10(1).
APA	Luo W..,Khoo Y.S..,Hacke P..,Naumann V..,Lausch D..,...&Ramakrishna S..(2017).Potential-induced degradation in photovoltaic modules: A critical review.Energy & Environmental Science,10(1).
MLA	Luo W.,et al."Potential-induced degradation in photovoltaic modules: A critical review".Energy & Environmental Science 10.1(2017).