气候变化领域集成服务门户(CCPortal): Boosting the thermoelectric performance of PbSe through dynamic doping and hierarchical phonon scattering

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DOI	10.1039/c8ee00418h
	Boosting the thermoelectric performance of PbSe through dynamic doping and hierarchical phonon scattering
	You L.; Liu Y.; Li X.; Nan P.; Ge B.; Jiang Y.; Luo P.; Pan S.; Pei Y.; Zhang W.; Snyder G.J.; Yang J.; Zhang J.; Luo J.
发表日期	2018
ISSN	17545692
起始页码	1848
结束页码	1858
卷号	11 期号:7
英文摘要	Here we find the peculiar behavior of Cu ions in the PbSe-Cu system increases its thermoelectric performance. For the electrical transport, a dynamic doping effect is achieved because more Cu ions enter into the PbSe lattice and provide extra charge carriers as the temperature increases, which guarantees an optimized carrier concentration over a wide temperature range. For the thermal transport, the presence of Cu2Se nanoprecipitates and dislocations at a low temperature range as well as the vibration of Cu atoms around the interstitial sites of PbSe at high temperatures result in hierarchical phonon scattering and a significantly reduced lattice thermal conductivity over the whole temperature range. As a result, a peak thermoelectric material figure of merit zT of up to 1.45 and a thermoelectric device figure of merit ZT close to unity are obtained for the sample with 0.375 at% Cu. Furthermore, enhanced thermoelectric properties are also realized for the Cu-intercalated PbS, implying that the temperature-driven dynamic behavior of Cu ions in a rigid lattice can serve as a general strategy to optimize the thermoelectric performance of IV-VI compounds. © 2018 The Royal Society of Chemistry.
英文关键词	Carrier concentration; Copper; Heavy ions; IV-VI semiconductors; Lead compounds; Phonon scattering; Phonons; Precipitation (chemical); Selenium compounds; Temperature; Thermal conductivity; Thermoelectric equipment; Electrical transport; Lattice thermal conductivity; Temperature increase; Thermo-Electric materials; Thermoelectric devices; Thermoelectric performance; Thermoelectric properties; Wide temperature ranges; Thermoelectricity; copper; equipment; inorganic compound; low temperature; performance assessment; thermal conductivity
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/190211
作者单位	School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai, 200444, China; Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai, 200444, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China; Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing, 100081, China; School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, China; Shenzhen Key Laboratory of Thermoelectric Materials, Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China; Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
推荐引用方式 GB/T 7714	You L.,Liu Y.,Li X.,et al. Boosting the thermoelectric performance of PbSe through dynamic doping and hierarchical phonon scattering[J],2018,11(7).
APA	You L..,Liu Y..,Li X..,Nan P..,Ge B..,...&Luo J..(2018).Boosting the thermoelectric performance of PbSe through dynamic doping and hierarchical phonon scattering.Energy & Environmental Science,11(7).
MLA	You L.,et al."Boosting the thermoelectric performance of PbSe through dynamic doping and hierarchical phonon scattering".Energy & Environmental Science 11.7(2018).