气候变化领域集成服务门户(CCPortal): Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: A route towards low-cost and high-performance III-V photovoltaics

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DOI	10.1039/c8ee02553c
	Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: A route towards low-cost and high-performance III-V photovoltaics
	Dutta P.; Rathi M.; Khatiwada D.; Sun S.; Yao Y.; Yu B.; Reed S.; Kacharia M.; Martinez J.; Litvinchuk A.P.; Pasala Z.; Pouladi S.; Eslami B.; Ryou J.-H.; Ghasemi H.; Ahrenkiel P.; Hubbard S.; Selvamanickam V.
发表日期	2019
ISSN	17545692
起始页码	756
结束页码	766
卷号	12 期号:2
英文摘要	In this report, we describe a unique roll-to-roll plasma-enhanced chemical vapor deposition (R2R-PECVD) technique to grow high-quality single-crystalline-like Ge films on flexible metal foils, an important advancement towards scalable processing of epitaxial Ge films at low-cost. Ion-beam assisted deposition was used to create single-crystalline-like substrate templates to enable epitaxial growth of Ge films. The Ge films were highly (004) oriented, biaxially-textured and showed remarkable crystalline quality, equivalent to single-crystal Ge wafers. Subsequently, the Ge films on metal foils were used as substrates to fabricate flexible GaAs single-junction solar cell by metal-oxide chemical vapor deposition (MOCVD). The champion device showed efficiency of 11.5%, and the average efficiency of four devices was 8% at 1 sun, the highest reported on GaAs PV directly deposited on alternative flexible substrates. Devices made on CVD-Ge film exhibited significantly improved performance compared to the ones grown on sputtered Ge films. Scalable production of inexpensive and flexible epi-Ge films will not only be useful for developing low-cost and high-performance III-V solar cells, but also for emerging flexible electronic devices applications. © 2019 The Royal Society of Chemistry.
英文关键词	Costs; Crystalline materials; Efficiency; Electron devices; Epitaxial growth; Gallium arsenide; III-V semiconductors; Ion beam assisted deposition; Ion beams; Metal foil; Metals; Oxide films; Plasma CVD; Plasma enhanced chemical vapor deposition; Semiconducting gallium; Single crystals; Solar cells; Solar power generation; Substrates; Textures; Average efficiencies; Crystalline quality; Epitaxial ge films; Flexible electronic devices; Flexible substrate; Scalable production; Single junction solar cells; Single-crystalline; Germanium; efficiency measurement; electronic equipment; fuel cell; metal; performance assessment; photovoltaic system; substrate
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/189998
作者单位	Department of Mechanical Engineering, University of Houston, Houston, TX 77204, United States; Advanced Manufacturing Institute, University of Houston, Houston, TX 77204, United States; Texas Center for Superconductivity, University of Houston, Houston, TX 77204, United States; Department of Physics and Microsystems Engineering, Rochester Institute of Technology, Rochester, NY 14623, United States; Materials Evaluation Laboratory, NASA Johnson Space Center, Houston, TX 77085, United States; Nanoscience and Nanoengineering, South Dakota School of Mines and Technology, Rapid City, SD 57701, United States
推荐引用方式 GB/T 7714	Dutta P.,Rathi M.,Khatiwada D.,et al. Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: A route towards low-cost and high-performance III-V photovoltaics[J],2019,12(2).
APA	Dutta P..,Rathi M..,Khatiwada D..,Sun S..,Yao Y..,...&Selvamanickam V..(2019).Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: A route towards low-cost and high-performance III-V photovoltaics.Energy & Environmental Science,12(2).
MLA	Dutta P.,et al."Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: A route towards low-cost and high-performance III-V photovoltaics".Energy & Environmental Science 12.2(2019).