气候变化领域集成服务门户(CCPortal): Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe

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DOI	10.1039/c9ee01137d
	Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe
	You L.; Zhang J.; Pan S.; Jiang Y.; Wang K.; Yang J.; Pei Y.; Zhu Q.; Agne M.T.; Snyder G.J.; Ren Z.; Zhang W.; Luo J.
发表日期	2019
ISSN	17545692
起始页码	3089
结束页码	3098
卷号	12 期号:10
英文摘要	It is a great challenge to optimize a material's thermoelectric performance due to the strong correlation between its thermoelectric-transport properties, especially the electrical-transport properties. Optimizing the peak zT using a constant carrier concentration is commonly adopted because of the difficulty in realizing the optimum temperature-dependent carrier concentration, but this is not meaningful for real applications, in which the average zT value over the working temperature range is much more important. Here we propose an effective strategy involving the dynamic doping effect of interstitial Cu atoms to fully optimize the electrical-transport properties of n-type PbTe over a wide temperature range. By using Cu intercalation, the temperature-dependent carrier concentration of PbTe is found to well match the theoretically optimal profile. Furthermore, high carrier mobility is largely maintained because the dynamic behavior of the interstitial Cu does not alter the band structure and therefore change the effective mass. Consequently, a peak zT of ∼1.3 and a calculated leg efficiency of 12% were achieved for the sample with 0.2 at% Cu. Based on our findings, we further proposed a concept of 'interstitial engineering' to reinforce the dynamic doping effect, which is of fundamental importance for optimizing the thermoelectric properties. © 2019 The Royal Society of Chemistry.
英文关键词	Copper; IV-VI semiconductors; Lead compounds; Tellurium compounds; Thermoelectricity; Transport properties; Electrical transport properties; High carrier mobility; Temperature dependent; Thermoelectric performance; Thermoelectric properties; Thermoelectric transport properties; Wide temperature ranges; Working temperatures; Carrier concentration; concentration (composition); electrical property; electron; equipment; inorganic compound; perforation; performance assessment; temperature effect
语种	英语
来源期刊	Energy & Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/189802
作者单位	School of Materials Science and Engineering, Shanghai University, 99 Shangda Road, Shanghai, 200444, China; Department of Physics, Texas Center for Superconductivity, University of Houston, Houston, TX 77204, United States; Materials Genome Institute, Shanghai University, 99 Shangda Road, Shanghai, 200444, China; School of Materials Science and Engineering, Tongji University, 4800 Caoan Road, Shanghai, 201804, China; Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States; Institute for Quantum Science and Engineering, Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
推荐引用方式 GB/T 7714	You L.,Zhang J.,Pan S.,et al. Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe[J],2019,12(10).
APA	You L..,Zhang J..,Pan S..,Jiang Y..,Wang K..,...&Luo J..(2019).Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe.Energy & Environmental Science,12(10).
MLA	You L.,et al."Realization of higher thermoelectric performance by dynamic doping of copper in n-type PbTe".Energy & Environmental Science 12.10(2019).