气候变化领域集成服务门户(CCPortal): Self-inhibition effect of metal incorporation in nanoscaled semiconductors

CCPortal

DOI	10.1073/pnas.2010642118
	Self-inhibition effect of metal incorporation in nanoscaled semiconductors
	Zhu B.; Yi D.; Wang Y.; Sun H.; Sha G.; Zheng G.; Garnett E.C.; Tian B.; Ding F.; Zhu J.
发表日期	2021
ISSN	00278424
卷号	118 期号:4
英文摘要	There has been a persistent effort to understand and control the incorporation of metal impurities in semiconductors at nanoscale, as it is important for semiconductor processing from growth, doping to making contact. Previously, the injection of metal atoms into nanoscaled semiconductor, with concentrations orders of magnitude higher than the equilibrium solid solubility, has been reported, which is often deemed to be detrimental. Here our theoretical exploration reveals that this colossal injection is because gold or aluminum atoms tend to substitute Si atoms and thus are not mobile in the lattice of Si. In contrast, the interstitial atoms in the Si lattice such as manganese (Mn) are expected to quickly diffuse out conveniently. Experimentally, we confirm the self-inhibition effect of Mn incorporation in nanoscaled silicon, as no metal atoms can be found in the body of silicon (below 1017 atoms per cm−3) by careful three-dimensional atomic mappings using highly focused ultraviolet-laser-assisted atom-probe tomography. As a result of self-inhibition effect of metal incorporation, the corresponding field-effect devices demonstrate superior transport properties. This finding of self-inhibition effect provides a missing piece for understanding the metal incorporation in semiconductor at nanoscale, which is critical not only for growing nanoscale building blocks, but also for designing and processing metal–semiconductor structures and fine-tuning their properties at nanoscale. © 2021 National Academy of Sciences. All rights reserved.
英文关键词	Density-functional theory calculation; Metal catalyst; Self-inhibition effect; Semiconductor nanowires
语种	英语
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/180855
作者单位	National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093, China; Jiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093, China; Center for Multidimensional Carbon Materials (CMCM), Institute for Basic Science (IBS), Ulsan, 44919, South Korea; Department of Physics, School of Science, Beijing Jiaotong University, Beijing, 100044, China; Center for Nanophotonics, Fundamental Research on Matter Institute for Atomic and Molecular Physics (AMOLF), Amsterdam, 1098 XG, Netherlands; Herbert Gleiter Institute of Nanoscience, Nanjing University of Science and Technology, Nanjing, 210094, China; Ministry of Industry and Information Technology (MIIT), Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Nanjing University of Science and Technology, Nanjing, 210094, China; Department of Chemistry, University of Chicago, Chicago, IL 60637, United States; School of Materials Science...
推荐引用方式 GB/T 7714	Zhu B.,Yi D.,Wang Y.,et al. Self-inhibition effect of metal incorporation in nanoscaled semiconductors[J],2021,118(4).
APA	Zhu B..,Yi D..,Wang Y..,Sun H..,Sha G..,...&Zhu J..(2021).Self-inhibition effect of metal incorporation in nanoscaled semiconductors.Proceedings of the National Academy of Sciences of the United States of America,118(4).
MLA	Zhu B.,et al."Self-inhibition effect of metal incorporation in nanoscaled semiconductors".Proceedings of the National Academy of Sciences of the United States of America 118.4(2021).