气候变化领域集成服务门户(CCPortal): Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain

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DOI	10.1073/pnas.2101946118
	Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain
	Tian D.; Liu Z.; Shen S.; Li Z.; Zhou Y.; Liu H.; Chen H.; Yu P.
发表日期	2021
ISSN	00278424
卷号	118 期号:18
英文摘要	Berry curvature plays a crucial role in exotic electronic states of quantum materials, such as the intrinsic anomalous Hall effect. As Berry curvature is highly sensitive to subtle changes of electronic band structures, it can be finely tuned via external stimulus. Here, we demonstrate in SrRuO3 thin films that both the magnitude and sign of anomalous Hall resistivity can be effectively controlled with epitaxial strain. Our first-principles calculations reveal that epitaxial strain induces an additional crystal field splitting and changes the order of Ru d orbital energies, which alters the Berry curvature and leads to the sign and magnitude change of anomalous Hall conductivity. Furthermore, we show that the rotation of the Ru magnetic moment in real space of a tensile-strained sample can result in an exotic nonmonotonic change of anomalous Hall resistivity with the sweeping of magnetic field, resembling the topological Hall effect observed in noncoplanar spin systems. These findings not only deepen our understanding of anomalous Hall effect in SrRuO3 systems but also provide an effective tuning knob to manipulate Berry curvature and related physical properties in a wide range of quantum materials. © 2021 National Academy of Sciences. All rights reserved.
英文关键词	Anomalous Hall effect; Berry curvature; Complex oxides; Epitaxial strain; Spin rotation
语种	英语
来源期刊	Proceedings of the National Academy of Sciences of the United States of America
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/179701
作者单位	State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China; Department of Electronics, East China Normal University, Shanghai, 200241, China; New York University-East China Normal University (NYU-ECNU), Institute of Physics, NYU Shanghai, Shanghai, 200122, China; Department of Physics, New York UniversityNY 10012, United States; Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China; RIKEN Center for Emergent Matter Science, Wako, 351-198, Japan
推荐引用方式 GB/T 7714	Tian D.,Liu Z.,Shen S.,et al. Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain[J],2021,118(18).
APA	Tian D..,Liu Z..,Shen S..,Li Z..,Zhou Y..,...&Yu P..(2021).Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain.Proceedings of the National Academy of Sciences of the United States of America,118(18).
MLA	Tian D.,et al."Manipulating Berry curvature of SrRuO3 thin films via epitaxial strain".Proceedings of the National Academy of Sciences of the United States of America 118.18(2021).