气候变化领域集成服务门户(CCPortal): Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots

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DOI	10.1063/1.5120757
	Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots
	Brndiarova J.; Siffalovic P.; Hulman M.; Kalosi A.; Bodik M.; Skakalova V.; Micusik M.; Markovic Z.; Majkova E.; Frohlich K.
发表日期	2019
ISSN	218979
卷号	126 期号:21
英文摘要	Ubiquitous carbon nanomaterials have great potential for emerging technologies, but they also pose a threat to human health at the end of their lifecycle, especially when they are introduced into waste or ground waters. Graphene field-effect transistors (GFET) and real time in situ confocal Raman microscopy (CRM) were employed to detect a submonolayer of carbon quantum dots (CQDs) in water. An effective GFET channel was formed on exfoliated and chemical vapor deposited (CVD) graphene. The adsorption of CQDs was monitored by measuring conductance changes in GFETs. The graphene channel was functionalized with (3-aminopropyl) triethoxysilane (APTES), which allowed for easy observation of a shift in the charge neutrality point (CNP) when the graphene channel was exposed to CQDs. The affinity of the CQD's carboxyl terminal groups to the aminofunctionalized channel enabled a highly sensitive CQD detection based on changes in the GFET conductivity. The adsorption of the CQDs induced a positive shift of the CNP with a limit of detection at concentrations of 239 ppm and 62 ppm for the exfoliated and CVD graphene, respectively. A supporting study of graphene functionalization and CQD adsorption was performed by real time in situ CRM, ellipsometry, and ex situ X-ray photoelectron spectroscopy. Author(s).
scopus关键词	Adsorption; Chemical vapor deposition; Field effect transistors; Graphene; Groundwater; Health risks; Life cycle; Nanocrystals; Semiconductor quantum dots; X ray photoelectron spectroscopy; Carbon nano-materials; Carbon quantum dots; Chemical vapor deposited; Confocal Raman microscopy; Emerging technologies; Functionalized graphene; Graphene fieldeffect transistors (GFET); Ultrasensitive detection; Graphene transistors
来源期刊	Journal of Applied Physics
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/176149
作者单位	Institute of Electrical Engineering, Slovak Academy of Sciences, 9 Dubravska cesta, Bratislava, 841 04, Slovakia; Institute of Physics, Slovak Academy of Sciences, 5807/9 Dubravska cesta, Bratislava, 845 11, Slovakia; Centre for Advanced Materials Application CEMEA, Slovak Academy of Sciences, 5807/9 Dubravska cesta, Bratislava, 845 11, Slovakia; Danubia NanoTech, s.r.o., 2961/3 Ilkovicova, Bratislava, 841 04, Slovakia; Department of Physics of Nanostructured Materials, University of Vienna, 5 Boltzmanngasse, Vienna, A-1090, Austria; Polymer Institute, Slovak Academy of Sciences, 9 Dubravska cesta, Bratislava, 845 41, Slovakia; Vinca Institute of Nuclear Sciences, 12-14 Mike Alasa, Vinca, Belgrade, 11351, Serbia
推荐引用方式 GB/T 7714	Brndiarova J.,Siffalovic P.,Hulman M.,et al. Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots[J],2019,126(21).
APA	Brndiarova J..,Siffalovic P..,Hulman M..,Kalosi A..,Bodik M..,...&Frohlich K..(2019).Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots.Journal of Applied Physics,126(21).
MLA	Brndiarova J.,et al."Functionalized graphene transistor for ultrasensitive detection of carbon quantum dots".Journal of Applied Physics 126.21(2019).