气候变化领域集成服务门户(CCPortal): Deep levels; charge transport and mixed conductivity in organometallic halide perovskites

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DOI	10.1039/c9ee00311h
	Deep levels; charge transport and mixed conductivity in organometallic halide perovskites
	Musiienko A.; Moravec P.; Grill R.; Praus P.; Vasylchenko I.; Pekarek J.; Tisdale J.; Ridzonova K.; Belas E.; Landová L.; Hu B.; Lukosi E.; Ahmadi M.
发表日期	2019
ISSN	1754-5692
起始页码	1413
结束页码	1425
卷号	12 期号:4
英文摘要	Understanding the type, formation energy and capture cross section of defects is one of the challenges in the field of organometallic halide perovskite (OMHP) devices. Currently, such understanding is limited, restricting the power conversion efficiencies of OMHP solar cells from reaching their Shockley-Queisser limit. In more mature semiconductors like Si, the knowledge of defects is one of the major factors in successful technological implementation. This knowledge and its control can make a paradigm shift in the development of OMHP devices. Here, we report on deep level (DL) defects and their effect on the free charge transport properties of the single crystalline methylammonium lead bromide (MAPbBr3) perovskite. To determine DL activation energy and capture cross section, we used photo-Hall effect spectroscopy (PHES) with enhanced illumination in both steady-state and dynamic regimes. This method has shown to be convenient due to the direct DL visualization by sub-bandgap photo-excitation of trapped carriers. DLs with activation energies of EV + 1.05 eV, EV + 1.5 eV, and EV + 1.9 eV (or EC - 1.9 eV) were detected. The hole capture cross section of σh = 4 × 10-17 cm2 is found using photoconductivity relaxation after sub-bandgap photo-excitation. Here, our experimental results demonstrate the existence of DL defects responsible for non-radiative recombination and their positions inside the bandgap for the first time. Additionally, the transport properties of single crystal MAPbBr3 are investigated by Time of Flight (ToF) measurements at several biases. These measurements further confirm the increase of Hall mobility and the enhancement of hole transport produced by sub-bandgap illumination in MAPbBr3 devices. The analysis of charge carrier transport by ToF measurements in combination with the energy of DLs identified by PHES can explain the long hole carrier lifetime in MAPbBr3 devices, while the electron carrier lifetime is largely affected by trap-assisted recombination. Here, our studies provide strong evidence for deep levels in OMHPs and open a richer picture of the role and properties of deep levels in MAPbBr3 single crystals as a system model for the first time. The deeper knowledge of the electronic structure of OMHPs could open further opportunities in the development of more feasible technologies. Indeed, knowledge of the exact positions of DLs is beneficial in controlling these defects by crystal growth modification to eliminate these defects as was done for classical inorganic semiconductors, for example, in Si, GaAs, and CdTe development. © 2019 The Royal Society of Chemistry.
语种	英语
scopus关键词	Cadmium telluride; Carrier lifetime; Carrier transport; Defects; Electronic structure; Energy gap; Gallium arsenide; Hall mobility; Hole mobility; II-VI semiconductors; III-V semiconductors; Image enhancement; Lead compounds; Organometallics; Perovskite; Semiconducting cadmium telluride; Semiconducting gallium arsenide; Semiconducting silicon; Silicon compounds; Single crystals; Transport properties; Capture cross sections; Hole capture cross sections; Inorganic semiconductors; Non-radiative recombinations; Power conversion efficiencies; Shockley-queisser limits; Time of flight measurements; Trap-assisted recombinations; Activation energy; activation energy; conductivity; crystal chemistry; halide; inorganic matter; paradigm shift; perovskite; photovoltaic system; silicon
来源期刊	Energy and Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/162692
作者单位	Charles University, Faculty of Mathematics and Physics, Institute of Physics, Ke Karlovu 5, Prague 2, CZ-121 16, Czech Republic; Joint Institute for Advanced Materials, Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN 37996, United States; Institute of Physics, Academy of Sciences of the Czech Republic, Prague, Czech Republic; Electrical Engineering, Czech Technical University in Prague, Prague, Czech Republic; Joint Institute for Advanced Materials, Department of Nuclear Engineering, University of Tennessee, Knoxville, TN 37996, United States
推荐引用方式 GB/T 7714	Musiienko A.,Moravec P.,Grill R.,et al. Deep levels; charge transport and mixed conductivity in organometallic halide perovskites[J],2019,12(4).
APA	Musiienko A..,Moravec P..,Grill R..,Praus P..,Vasylchenko I..,...&Ahmadi M..(2019).Deep levels; charge transport and mixed conductivity in organometallic halide perovskites.Energy and Environmental Science,12(4).
MLA	Musiienko A.,et al."Deep levels; charge transport and mixed conductivity in organometallic halide perovskites".Energy and Environmental Science 12.4(2019).