气候变化领域集成服务门户(CCPortal): A computational survey of semiconductors for power electronics

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DOI	10.1039/c9ee01529a
	A computational survey of semiconductors for power electronics
	Gorai P.; McKinney R.W.; Haegel N.M.; Zakutayev A.; Stevanovic V.
发表日期	2019
ISSN	1754-5692
起始页码	3338
结束页码	3347
卷号	12 期号:11
英文摘要	Power electronics (PE) are used to control and convert electrical energy in a wide range of applications from consumer products to large-scale industrial equipment. While Si-based power devices account for the vast majority of the market, wide band gap semiconductors such as SiC, GaN, and Ga2O3 are starting to gain ground. However, these emerging materials face challenges due to either non-negligible defect densities, high synthesis and processing costs, or poor thermal properties. Here, we report on a broad computational survey aimed to identify promising materials for future power electronic devices beyond SiC, GaN, and Ga2O3. We consider 863 oxides, sulfides, nitrides, carbides, silicides, and borides that exhibit finite calculated band gaps. We utilize ab initio methods in conjunction with models for intrinsic carrier mobility, and critical breakdown field to compute the widely used Baliga figure of merit. We also compute the lattice thermal conductivity and use it as an additional screening parameter. In addition to correctly identifying known PE materials, our survey has revealed a number of promising candidates exhibiting the desirable combination of high figure of merit and high lattice thermal conductivity, which we propose for further experimental investigations. This journal is © The Royal Society of Chemistry.
语种	英语
scopus关键词	Carbides; Consumer products; Crystal lattices; Energy gap; Gallium nitride; III-V semiconductors; Power semiconductor devices; Semiconducting gallium compounds; Semiconducting silicon compounds; Silicides; Silicon carbide; Sulfur compounds; Surveys; Thermal conductivity; Electrical energy; Emerging materials; Experimental investigations; Figure of merits; Industrial equipment; Lattice thermal conductivity; Power electronic devices; Synthesis and processing; Wide band gap semiconductors; electrical conductivity; electrical power; equipment; experimental study; parameter estimation; thermal conductivity
来源期刊	Energy and Environmental Science
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/162474
作者单位	Colorado School of Mines, Golden, CO 80401, United States; National Renewable Energy Laboratory, Golden, CO 80401, United States
推荐引用方式 GB/T 7714	Gorai P.,McKinney R.W.,Haegel N.M.,et al. A computational survey of semiconductors for power electronics[J],2019,12(11).
APA	Gorai P.,McKinney R.W.,Haegel N.M.,Zakutayev A.,&Stevanovic V..(2019).A computational survey of semiconductors for power electronics.Energy and Environmental Science,12(11).
MLA	Gorai P.,et al."A computational survey of semiconductors for power electronics".Energy and Environmental Science 12.11(2019).