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	The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET
	Chen, Hong; Hao, Jilong; Zhou, QianFei; Feng, Qi; Bai, Yun
发表日期	2018
英文摘要	The characteristics and fabrication process of VD-MOSFET are presented in this paper. The accurate modeling is validated by the data caught by experiments and structure parameters with real physical meanings including I-V and capacitance characteristics. What's more, the double pulse test is used for dynamic validation. It is shown that the simulation result meets the experiment result excellent over the entire range.
关键词	SiC Power MOSFET Modeling Fabrication Process Dynamic Validation Double Pulse Test
学科领域	Engineering
语种	英语
WOS研究方向	Engineering, Electrical & Electronic
来源期刊	2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/112009
作者单位	Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
推荐引用方式 GB/T 7714	Chen, Hong,Hao, Jilong,Zhou, QianFei,et al. The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET[J]. 中国科学院西北生态环境资源研究院,2018.
APA	Chen, Hong,Hao, Jilong,Zhou, QianFei,Feng, Qi,&Bai, Yun.(2018).The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET.2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT).
MLA	Chen, Hong,et al."The Characteristics and Modeling of 600V and 1200V SiC Power MOSFET".2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT) (2018).