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DOI	10.1063/1.5043169
	InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm
	Wei, Wen-Qi; Wang, Jian-Huan; Zhang, Bin; Zhang, Jie-Yin; Wang, Hai-Ling; Feng, Qi; Xu, Hong-Xing; Wang, Ting; Zhang, Jian-Jun
发表日期	2018
ISSN	0003-6951
EISSN	1077-3118
卷号	113 期号:5
英文摘要	Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shaped patterned Si (001) substrate, With in-situ growth on such substrates by the dual chamber molecular beam epitaxy, a high-quality GaAs film is obtained. The (111)-faceted sawtooth structures are found effectively annihilating the antiphase boundaries and terminating mostly the lattice mismatch induced dislocations at the interface, while the hollow structures can effectively reduce the thermal stress. The high-quality GaAs layers on (111)-faceted hollow Si (001) arc measured with a threading dislocation density of similar to 10(6)cm(-2) via the electron channeling contrast image method. By implementing the designed structure, strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at both O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are achieved on Si (001) substrates. The O-band emission of InAs/GaAs QDs on Si (001) shows similar intensity to that on the GaAs substrate. Published by AIP Publishing.
学科领域	Physics
语种	英语
WOS研究方向	Physics, Applied
来源期刊	APPLIED PHYSICS LETTERS
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111994
作者单位	Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China
推荐引用方式 GB/T 7714	Wei, Wen-Qi,Wang, Jian-Huan,Zhang, Bin,et al. InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm[J]. 中国科学院西北生态环境资源研究院,2018,113(5).
APA	Wei, Wen-Qi.,Wang, Jian-Huan.,Zhang, Bin.,Zhang, Jie-Yin.,Wang, Hai-Ling.,...&Zhang, Jian-Jun.(2018).InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm.APPLIED PHYSICS LETTERS,113(5).
MLA	Wei, Wen-Qi,et al."InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm".APPLIED PHYSICS LETTERS 113.5(2018).