气候变化领域集成服务门户(CCPortal): Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors

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DOI	10.1016/j.mejo.2016.10.006
	Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors
	Cheng, Xu; Zeng, Xiaoyang; Feng, Qi
发表日期	2016
ISSN	0026-2692
EISSN	1879-2391
卷号	58
英文摘要	The single-ramp single-slope (SRSS) analog-to-digital converter (ADC) is a promising candidate for column-parallel architectures. This paper, for the first time, quantitatively analyzes the ramp gain error in the ramp-input stage (RIS) that is the crucial component in such ADC, and verifies it using behavior model simulation. Then, a novel active RIS is proposed to alleviate the ramp gain error. With an active feedback loop, the ramp gain becomes a product of two reciprocal ratios of capacitance, whose departure from unity is attributed to the relative deviations rather than the absolute values in the conventional passive RIS. The proposed concept is designed and verified by simulations in a 0.18-mu m CMOS process.
关键词	CMOS image sensor (CIS)Analog-to-digital converter (ADC)Column-parallel ADC Single-slope ADC Two-step ADC
学科领域	Engineering; Science & Technology - Other Topics
语种	英语
WOS研究方向	Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology
来源期刊	MICROELECTRONICS JOURNAL
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111873
作者单位	Fudan Univ, State Key Lab ASIC & Syst, Shanghai, Peoples R China
推荐引用方式 GB/T 7714	Cheng, Xu,Zeng, Xiaoyang,Feng, Qi. Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors[J]. 中国科学院西北生态环境资源研究院,2016,58.
APA	Cheng, Xu,Zeng, Xiaoyang,&Feng, Qi.(2016).Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors.MICROELECTRONICS JOURNAL,58.
MLA	Cheng, Xu,et al."Analysis and improvement of ramp gain error in single-ramp single-slope ADCs for CMOS image sensors".MICROELECTRONICS JOURNAL 58(2016).