气候变化领域集成服务门户(CCPortal): Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes

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DOI	10.1002/adom.201500190
	Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes
	Luo, Wengang; Cao, Yufei; Hu, Pingan; Cai, Kaiming; Feng, Qi; Yan, Faguang; Yan, Tengfei; Zhang, Xinhui; Wang, Kaiyou
发表日期	2015
ISSN	2195-1071
卷号	3 期号:10
英文摘要	In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As expected, the response speed of InSe/graphene photodetectors is down to 120 mu s, which is about 40 times faster than that of an InSe/metal device. It can also be tuned by the back-gate voltage from 310 mu s down to 100 mu s. With the high response speed, the photoresponsivity can reach as high as 60 A W-1 simultaneously. Meanwhile the InSe/graphene photodetectors possess a broad spectral range at 400-1000 nm. The design of 2D crystal/graphene electrical contacts can be important for high-performance optoelectronic devices.
学科领域	Materials Science; Optics
语种	英语
WOS研究方向	Materials Science, Multidisciplinary ; Optics
来源期刊	ADVANCED OPTICAL MATERIALS
来源机构	中国科学院西北生态环境资源研究院
文献类型	期刊论文
条目标识符	http://gcip.llas.ac.cn/handle/2XKMVOVA/111798
作者单位	Chinese Acad Sci, SKLSM, Inst Semicond, Beijing 100083, Peoples R China
推荐引用方式 GB/T 7714	Luo, Wengang,Cao, Yufei,Hu, Pingan,et al. Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes[J]. 中国科学院西北生态环境资源研究院,2015,3(10).
APA	Luo, Wengang.,Cao, Yufei.,Hu, Pingan.,Cai, Kaiming.,Feng, Qi.,...&Wang, Kaiyou.(2015).Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes.ADVANCED OPTICAL MATERIALS,3(10).
MLA	Luo, Wengang,et al."Gate Tuning of High-Performance InSe-Based Photodetectors Using Graphene Electrodes".ADVANCED OPTICAL MATERIALS 3.10(2015).